Fabrication and Electrical Characterization of Fully CMOS-Compatible Si Single-Electron Devices
نویسندگان
چکیده
منابع مشابه
Spin-Based CMOS-Compatible Devices
In the present work, the nonlinear equation of motion of Bernoulli-Euler beam is used for investigating the scalability of the shooting method. A parallel implementation of the complete process of computing the nonlinear frequency-response function is presented and its efficiency is studied. The process involves algebraic operations of sparse and dense matrices and also solutions of linear and ...
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ژورنال
عنوان ژورنال: IEEE Transactions on Electron Devices
سال: 2013
ISSN: 0018-9383,1557-9646
DOI: 10.1109/ted.2012.2227322